The role of hydrogen in semi-insulating InP

Book · Thu Dec 31 04:00:00 EST 1998

OSTI ID:308115

Han, Y; Liu, X; Jiao, J; Qian, J; Chen, Y; Wang, Z; Lin, L ^[1]

---

1. Chinese Academy of Sciences, Beijing (China). Lab. of Semiconductor Materials Science

Complexes of vacancy at indium site with one to four hydrogen atoms and isolated hydrogen or hydrogen dimer and other infrared absorption lines, tentatively be assigned to hydrogen related defects were investigated by FTIR. Hydrogen can passivate imperfections, thereby eliminating detrimental electronic states from the energy bandgap. Incorporated hydrogen can introduce extended defects and generate electrically-active defects. Hydrogen also can act as an actuator for creating antistructure defects. Isolated hydrogen related defects (e.g., H{sub 2}{sup *}) may play an important role in the conversion of the annealed wafers from semiconducting to the semi-insulating behavior. H{sub 2}{sup *} may be a deep donor, whose energy level is very near the iron deep acceptor level in the energy gap.

• OSTI ID: 308115
• Report Number(s): CONF-980405--
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL DEFECTS
ELECTRICAL PROPERTIES
ENERGY GAP
EXPERIMENTAL DATA
HYDROGEN
IMPURITIES
INDIUM PHOSPHIDES
PASSIVATION