Structural characterization of thin Ni films deposited on (001) ZnSe

Journal Article · Sat Mar 01 04:00:00 EST 1997 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.589273· OSTI ID:535935

Ruvimov, S; Liliental-Weber, Z; Bourret, E D; Swider, W; Washburn, J ^[1]; Duxstad, K J; Haller, E E ^[2]

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1. Materials Sciences Division, Lawrence Berkeley National Laboratory, MS 63-203, Berkeley, California 94720 (United States)
2. Department of Material Sciences and Mineral Engineering, University of California, Berkeley, and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

Transmission electron microscopy and x-ray diffraction have been used to study the evolution of the structure during thermal annealing of thin Ni films deposited on ZnSe. 30-nm-thick Ni layers were deposited, and then annealed at temperatures ranging between 300 and 475{degree}C for 0.5 or 1 h in a N{sub 2} atmosphere. The as-deposited Ni layer was found to be polycrystalline. Annealing results in Ni diffusion into the ZnSe and outdiffusion of the Zn and Se toward the sample surface. The Se reacts with Ni to form Ni{sub x}Se phases at the Ni{endash}ZnSe interface and in the Ni layer. Formation of a metastable tetragonal Ni{sub x}Se phase detected after annealing at 425{degree}C was found to be suppressed at higher annealing temperatures. The cubic Ni{sub x}Se phase (x{approximately}1) with a=4.23 {Angstrom} dominates in the samples after annealing at temperatures above 425{degree}C. Both phases are crystallographically oriented with respect to the matrix so as to provide the best lattice match with the ZnSe. {copyright} {ital 1997 American Vacuum Society.}

• Research Organization: Lawrence Berkeley National Laboratory
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 535935
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 2 Vol. 15; ISSN JVTBD9; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CHEMICAL REACTIONS
CRYSTAL STRUCTURE
DIFFUSION
INTERFACES
NICKEL
PHASE STUDIES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
ZINC SELENIDES