Interfacial reaction behavior of Pt, Pd, and Ni on ZnSe

Journal Article · Tue Jul 01 04:00:00 EDT 1997 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.589504· OSTI ID:528014

Duxstad, K J; Haller, E E ^[1]; Yu, K M; Bourret, E D; Lin, X W; Ruvimov, S; Liliental-Weber, Z; Washburn, J ^[2]

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1. Department of Materials Science and Mineral Engineering, University of California at Berkeley and Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
2. Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

The solid-state reactions of Pt, Pd, and Ni thin film contacts on ZnSe were studied. Pd has been observed to react at 200{degree}C to form a ternary, epitaxial phase, Pd{sub 5+x}ZnSe. This phase is stable up to 450{degree}C, when Pd begins to diffuse through the ZnSe into the GaAs substrate. Pt begins to react at 575{degree}C and forms a layer of Pt{sub 5}Se{sub 4} at the Pt/ZnSe interface. Above the interfacial layer there is a Pt{endash}Zn solid solution, but no Pt{endash}Zn phases were observed. After annealing at 675{degree}C, the Pt{sub 5}Se{sub 4} phase is no longer observed and Pt{endash}Zn phases form. A small amount of interdiffusion at the Ni/ZnSe interface has been observed by transmission electron microscopy after annealing at 300{degree}C. Annealing at 425{degree}C results in the formation of laterally separated grains of a metastable Ni{sub x}Se phase. After annealing at 450{degree}C, grains of NiSe are observed. The similarities between these reactions and the near-noble metal reactions on Si and GaAs are discussed as well as the possibility of using these reactions for forming electrical contacts to ZnSe. {copyright} {ital 1997 American Vacuum Society.}

• Research Organization: Lawrence Berkeley National Laboratory
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 528014
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 4 Vol. 15; ISSN JVTBD9; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

40 CHEMISTRY
ANNEALING
CHEMICAL REACTIONS
ELECTRIC CONTACTS
INTERFACES
NICKEL
PALLADIUM
PLATINUM
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
ZINC COMPOUNDS
ZINC SELENIDES