Sol-gel processing of Pb(Zr{sub 0.52}, Ti{sub 0.48})O{sub 3} thin films: Dopant compensation mechanism and leakage current characteristics
- Arizona State Univ., Tempe, AZ (United States)
Dopant compensation mechanism of sol-gel derived Pb(Zr{sub 0.52},Ti{sub 0.48})O{sub 3} or PZT thin films with 2-5 mole percent niobium (Nb) dopant was studied. Transmission electron microscopy (TEM) showed that the Nb-doped composition batched according to the Ti vacancy-model, was single phase. This indicated that niobium donors were compensated by titanium vacancies at the B-site. The beneficial effect of donors in single phase composition and detrimental effects of grain boundary second phases and acceptors on the leakage currents are reported. The single phase Nb-doped (5%) PZT thin film exhibited a low leakage current of 1 x 10{sup -7} A/cm{sup 2} at 1.2 MV/cm and a high breakdown strength of 3 MV/cm. Additionally, the logarithmic plot of steady state conductivity versus the reciprocal of temperature (T), exhibited a change in the activation energy at 155{degrees} C. The activation energies of 1.2 eV at T >155{degrees} C and 0.1 - 0.2 eV at T < 155{degrees} C for the steady state conductivity were observed in Nb doped PZT thin films.
- OSTI ID:
- 535621
- Report Number(s):
- CONF-941199--
- Country of Publication:
- United States
- Language:
- English
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