Electrical properties of sol-gel PZT thin films for decoupling capacitor applications
- Sandia National Labs., Albuquerque, NM (United States) Advanced Materials Lab., Albuquerque, NM (United States)
- Sandia National Labs., Albuquerque, NM (United States)
The successful development of PZT thin films for decoupling capacitor devices places stringent requirements on the dielectric and leakage properties of the films. The authors have characterized these properties for PZT thin films with compositions near the morphotropic phase boundary prepared by a sol-gel process. Capacitors were fabricated from films with thicknesses varying from 0.4 to 1.2 [mu]m. For zero applied bias, the dielectric constants of these films were in the range of 800 to 1200. The room temperature dielectric constant was observed to decrease by [approximately]25% with the application of a 5 V bias. They have also characterized the interrelationships between temperature, applied bias, and dielectric constant. The capacitors exhibited asymmetry in their leakage and breakdown characteristics with bias sign, as well as non-linear I-V behavior. Breakdown fields for undoped PZT 53/47 films were typically in the range of 750 kV/cm. They have also studied the effects of La and Nb donor doping on the leakage behavior of PZT 50/50 thin films. Doping with 2 to 5 mol % of either La or Nb resulted in a reduction in film leakage current by a factor of 10[sup 3]. Leakage currents of the highly doped materials were approximately 2 [times] 10[sup [minus]9] A/cm[sup 2] under an applied field of [approximately]65 kV/cm at a temperature of 125[degrees]C.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- DOE; USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 7368732
- Report Number(s):
- SAND-92-2907C; CONF-930405--28; ON: DE93016491
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360204* -- Ceramics
Cermets
& Refractories-- Physical Properties
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
BEHAVIOR
BREAKDOWN
CAPACITORS
COMPARATIVE EVALUATIONS
CURRENTS
DECOUPLING
DOPED MATERIALS
ELECTRIC CURRENTS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
EQUIPMENT
EVALUATION
FILMS
LEAD COMPOUNDS
LEAKAGE CURRENT
MATERIALS
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PZT
SOL-GEL PROCESS
THIN FILMS
TITANATES
TITANIUM COMPOUNDS
TRANSDUCERS
TRANSITION ELEMENT COMPOUNDS
ZIRCONATES
ZIRCONIUM COMPOUNDS