Accelerated life-time testing and resistance degradation of thin-film decoupling capacitors
Resistance degradation in PZT thin-film capacitors has been studied as a function of applied voltage, temperature, and film composition. It is found that the mean-time-to-failure (life-time or t{sub f}) of the capacitors shows a power law dependence on applied voltage of he form t{sub f} {proportional_to} V{sup {minus}n} (n {approximately} 4--5). The capacitor life-time also exhibits a temperature dependence of the form t{sub f} {proportional_to} exp(E{sub a}/kT), with an activation energy of {approximately} 0.8 eV. The steady-state leakage current in these samples appears to be bulk controlled. The voltage, temperature, and polarity dependence of the leakage current collectively suggest a leakage current mechanism most similar to a Frenkel-Poole process. The life-time and leakage current of the Nb-doped PZT films are superior to the undoped PZT films. This result can be explained based on the point-defect chemistry of the PZT system. Finally, the results indicate that the Nb-doped PZT films meet the essential requirements for decoupling capacitor applications.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 286280
- Report Number(s):
- SAND--96-2055C; CONF-960894--2; ON: DE96014072
- Country of Publication:
- United States
- Language:
- English
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