Electrical properties of low-temperature GaAs grown by molecular beam epitaxy and migration enhanced epitaxy

Journal Article · Wed Dec 01 04:00:00 EST 1993 · Journal of Electronic Materials

DOI:https://doi.org/10.1007/BF02649993· OSTI ID:535218

Zhang, Kai; Miller, D L ^[1]

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1. Pennsylvania State Univ., University Park, PA (United States)

Measurements on low-temperature GaAs epitaxial layers (LT-GaAs) grown by molecular beam epitaxy and migration enhanced epitaxy showed that the excess arsenic incorporated during growth played a crucial role in determining their electrical properties. The electrical transport in LT-GaAs grown by a standard molecular beam epitaxy proceeded mainly via a hopping process, which showed a higher activation energy and onset temperature than those usually observed in lightly doped semiconductors. Using migration enhanced epitaxy to grow LT-GaAs, we were able to substantially reduce the density of As-rich defects and to achieve a good Hall mobility in Be-doped LT-GaAs. The study presented here indicates that, with controlled excess arsenic incorporation during growth, LT-GaAs can vary in a range of conduction properties and thus can be engineered for different device applications. 23 refs., 5 figs., 1 tab.

• Sponsoring Organization: USDOE
• OSTI ID: 535218
• Journal Information: Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 12 Vol. 22; ISSN JECMA5; ISSN 0361-5235
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
CRYSTAL DEFECTS
ELECTRICAL PROPERTIES
GALLIUM ARSENIDES
MOLECULAR BEAM EPITAXY