Growth of (110) GaAs/GaAs by molecular beam epitaxy

Conference · Mon Apr 01 04:00:00 EST 1985

OSTI ID:6047859

Parechanian, L T; Weber, E R; Hierl, T L

The simultaneous molecular beam epitaxy (MBE) growth of (100) and (110) GaAs/GaAs intentionally doped with Si(approx.1E16/cm3) was studied as a function of substrate temperature, arsenic overpressure, and epitaxial growth rate, using scanning electron and optical microscopy, liquid helium photoluminescence (PL), and electronic characterization. For the (110) epitaxal layers, an increase in morphological defect density and degradation of PL signal was observed with a lowering of the substrate temperature from 570C. Capacitance-voltage (CV) and Hall effect measurements yield room temperature donor concentrations for the (100) films of n approx. 7E15/cm3 while the (110) layers exhibit electron concentrations of n approx. 2E17/cm3. Hall measurements at 77K on the (100) films show the expected mobility enhancement of Si donors, whereas the (110) epi layers become insulating or greatly compensated. This behavior suggests that room temperature conduction in the (110) films is due to a deeper donor partially compensated by an acceptor level whose concentration is of the same order of magnitude as that of any electrically active Si. Temperature-dependent Hall effect indicates that the activation energy of the deeper donor level lies approx.145 MeV from the conduction band. PL and Hall effect indicate that the better quality (110) material is grown by increasing the arsenic flux during MBE growth. The nature of the defects involved with the growth process is discussed.

• Research Organization: Lawrence Berkeley Lab., CA (USA); Varian Solid State Microwave Div., Santa Clara, CA (USA)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6047859
• Report Number(s): LBL-19743; CONF-850421-15; ON: DE86005215
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ARSENIC COMPOUNDS
ARSENIDES
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELEMENTS
EPITAXY
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALL EFFECT
LUMINESCENCE
MATERIALS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
SEMIMETALS
SILICON