Glow discharge deposition of tetramethylsilane films
Thin films have been deposited in a low-pressure glow discharge of tetramethylsilane. The study of the deposition kinetics has shown that the determining parameter is the ratio W/P /SUP TMS/ of the RF power over the TMS partial pressure. The role of oxygenated impurities present in the starting monomer is emphasized. High values of the W/P /SUP TMS/ ratio give films of low oxygen content as shown by IR spectroscopy. measurements (<5% of Si-O bonds). These films have high densities (p about 1.7-2 g/cm/sup 3/) and refractive indices (1.7) and are similar to amorphous hydrogenated silicon carbide films. On the contrary, low values of W/P /SUB TMS/ result in the formation of a significant amount of Si-O bonds which are formed at the expense of Si-H bonds. The deposited films show lower densities (0.98-1.6 g/cm/sup 3/) and lower refractive indices (1.47). It is postulated that this oxygen, which affects the kinetics and the film properties, comes from oxygenated pollutants (H/sub 2/O) carried along with the monomer, and that its concentration depends on the temperature of the TMS cooling bath.
- Research Organization:
- UA CNRS, Nantes
- OSTI ID:
- 5349476
- Journal Information:
- Plasma Chem. Plasma Process.; (United States), Journal Name: Plasma Chem. Plasma Process.; (United States) Vol. 5:4; ISSN PCPPD
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360601* -- Other Materials-- Preparation & Manufacture
360603 -- Materials-- Properties
ABSORPTIVITY
CHEMICAL BONDS
CHEMICAL REACTION KINETICS
DENSITY
DEPOSITION
DISSOCIATION
ELECTRIC DISCHARGES
FILMS
GLOW DISCHARGES
HYDRIDES
HYDROGEN COMPOUNDS
IMPURITIES
INFRARED SPECTRA
KINETICS
LUMINESCENCE
MONOMERS
OPTICAL PROPERTIES
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PARTIAL PRESSURE
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PLASMA ARC SPRAYING
PRESSURE DEPENDENCE
REACTION KINETICS
REFRACTIVITY
SILANES
SILICON COMPOUNDS
SPECTRA
SPRAY COATING
STRUCTURAL CHEMICAL ANALYSIS
SURFACE COATING
TEMPERATURE DEPENDENCE
THIN FILMS