Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Glow discharge deposition of tetramethylsilane films

Journal Article · · Plasma Chem. Plasma Process.; (United States)
DOI:https://doi.org/10.1007/BF00566009· OSTI ID:5349476

Thin films have been deposited in a low-pressure glow discharge of tetramethylsilane. The study of the deposition kinetics has shown that the determining parameter is the ratio W/P /SUP TMS/ of the RF power over the TMS partial pressure. The role of oxygenated impurities present in the starting monomer is emphasized. High values of the W/P /SUP TMS/ ratio give films of low oxygen content as shown by IR spectroscopy. measurements (<5% of Si-O bonds). These films have high densities (p about 1.7-2 g/cm/sup 3/) and refractive indices (1.7) and are similar to amorphous hydrogenated silicon carbide films. On the contrary, low values of W/P /SUB TMS/ result in the formation of a significant amount of Si-O bonds which are formed at the expense of Si-H bonds. The deposited films show lower densities (0.98-1.6 g/cm/sup 3/) and lower refractive indices (1.47). It is postulated that this oxygen, which affects the kinetics and the film properties, comes from oxygenated pollutants (H/sub 2/O) carried along with the monomer, and that its concentration depends on the temperature of the TMS cooling bath.

Research Organization:
UA CNRS, Nantes
OSTI ID:
5349476
Journal Information:
Plasma Chem. Plasma Process.; (United States), Journal Name: Plasma Chem. Plasma Process.; (United States) Vol. 5:4; ISSN PCPPD
Country of Publication:
United States
Language:
English