Room-temperature near-band-edge photoluminescence from CuInSe{sub 2} heteroepitaxial layers grown by metalorganic vapor phase epitaxy

Journal Article · Mon Mar 31 23:00:00 EST 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.118708· OSTI ID:534419

Chichibu, S ^[1]

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1. Faculty of Science and Technology, Science University of Tokyo, 2641 Yamazaki, Noda, Chiba 278 (Japan)

High purity CuInSe{sub 2} heteroepitaxial layers were successfully grown by low-pressure metalorganic vapor phase epitaxy. A certain amount of excitonic absorption was found in the optical absorption spectra even at room temperature (RT). A predominant near-band-edge photoluminescence peak was observed at RT for the first time from a (001) oriented epilayer grown on a GaAs(001) substrate. The epilayers were grown in order to carry out a systematic investigation of intrinsic defects and intentional dopants in the matrix. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 534419
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 70; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION SPECTRA
COPPER SELENIDES
CRYSTAL DEFECTS
DOPED MATERIALS
EXCITONS
INDIUM SELENIDES
PHOTOLUMINESCENCE
SOLAR CELLS
THIN FILMS
VAPOR PHASE EPITAXY
VISIBLE SPECTRA