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High misfit epitaxial growth: Superconducting YBa sub 2 Cu sub 3 O sub 7 minus sub x thin films on (100)BaF sub 2 substrates

Journal Article · · Applied Physics Letters; (United States)
DOI:https://doi.org/10.1063/1.106295· OSTI ID:5342083
; ; ; ; ;  [1]
  1. Department of Physics, Peking University, Beijing 100871 (People's Republic of China)

{ital In} {ital situ} epitaxial growth of YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} superconducting thin films on (100)BaF{sub 2} substrates has been successful by an off-axis dc planar magnetron sputtering method. The zero-resistance temperatures of these thin films are about 81--84 K with transition width of 1.5 K. The characteristics of the films were examined by x-ray diffraction, reflection high energy electron diffraction, Rutherford backscattering spectroscopy ion channeling techniques, and scanning electron microscopy. The experimental results suggest that BaF{sub 2} is a promising material as substrates or buffer layers for the epitaxial growth of high {ital T}{sub {ital c}} superconducting thin films, especially in high frequency applications. Discussions on the heteroepitaxy of the YBCO/BaF{sub 2} system are propounded.

OSTI ID:
5342083
Journal Information:
Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 59:12; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English