Damage formation and substitutionality in sup 75 As sup ++ -implanted diamond
- Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee (USA)
- Max-Planck-Instituet fur Plasmaphysik, Euratom Association, D-8046, Garching (Germany)
- Japan Atomic Energy Research Institute, Tokai (Japan)
Rutherford backscattering spectrometry (RBS) has been used to study damage formation and substitutionality in synthetic diamonds implanted with 250-keV {sup 75}As{sup ++} at either 600 {degree}C or room temperature. Lattice damage following implantation at 600 {degree}C was substantially less than damage following room-temperature implantation and appears to be composed of a higher fraction of extended defects. A significant portion of the As implanted at 600 {degree}C was found to be in substitutional lattice sites with substitutional fractions as high as 50%. Changing the ion flux by three orders of magnitude during high-temperature implantation had no effect on either residual damage or substitutionality as indicated by the RBS analysis.
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 5340538
- Journal Information:
- Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 70:6; ISSN 0021-8979; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
ARSENIC 75
ARSENIC IONS
ARSENIC ISOTOPES
BACKSCATTERING
CARBON
CHARGED PARTICLES
DIAMONDS
ELASTIC SCATTERING
ELEMENTAL MINERALS
ELEMENTS
HIGH TEMPERATURE
INTERMEDIATE MASS NUCLEI
ION IMPLANTATION
IONS
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
MEDIUM TEMPERATURE
MINERALS
NONMETALS
NUCLEI
ODD-EVEN NUCLEI
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIOISOTOPES
RUTHERFORD SCATTERING
SCATTERING
SECONDS LIVING RADIOISOTOPES
STABLE ISOTOPES