Correlation between composition, microstructure, and ferroelectric properties of SrBi{sub 2}Ta{sub 2}O{sub 9} thin films

Journal Article · Tue Jul 01 04:00:00 EDT 1997 · Journal of the Electrochemical Society

DOI:https://doi.org/10.1149/1.1837793· OSTI ID:533101

Ono, Sachiko; Sakakibara, Akira; Seki, Tomonori; Osaka, Tetsuya ^[1]; Koiwa, Ichiro; Mita, Juro; Iwabuchi, Toshiyuki ^[2]; Asami, Katsuhiko ^[3]

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1. Waseda Univ., Tokyo (Japan)
2. Oki Electric Industry Co., Ltd., Hachioji, Tokyo (Japan)
3. Tohoku Univ., Sendai (Japan). Inst. for Materials Research

SrBi{sub 2}Ta{sub 2}O{sub 9} thin films prepared by a solution-deposition process were formed at various annealing temperatures. P-E hysteresis loops of the films exhibited well-defined shapes, and the leakage current decreased with increasing annealing temperature except for one annealed at 750 C. The considerable amount of metallic Bi on the film surface diffused from the inner part was evaluated by a quantitative x-ray photoelectron spectroscopic analysis. A discontinuity in morphology such as cavities detected by transmission electron microscopic observation at grain boundaries between large single-crystal grains and microcrystallite regions, which was pronounced in the film annealed at 750 C, is suggested as inducing an increase in leakage current by the condensation of metallic Bi at the cavities.

• Sponsoring Organization: USDOE
• OSTI ID: 533101
• Journal Information: Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 7 Vol. 144; ISSN 0013-4651; ISSN JESOAN
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
BISMUTH OXIDES
ELECTRICAL PROPERTIES
FERROELECTRIC MATERIALS
MICROSTRUCTURE
SPIN-ON COATING
STRONTIUM OXIDES
TANTALUM OXIDES