Thin films of layered-structure (1{minus}x)SrBi{sub 2}Ta{sub 2}O{sub 9}{minus}xBi{sub 3}Ti(Ta{sub 1{minus}y}Nb{sub y})O{sub 9} solid solution for ferroelectric random access memory devices
- Department of Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061-0237 (United States)
We report on the thin films of solid{endash}solution material (1{minus}x)SrBi{sub 2}Ta{sub 2}O{sub 9}{minus}xBi{sub 3}Ti(Ta{sub 1{minus}y}Nb{sub y})O{sub 9} fabricated by a modified metalorganic solution deposition technique for ferroelectric random access memory devices. Using the modified technique, it was possible to obtain the pyrochlore free crystalline thin films at an annealing temperature as low as 600{degree}C. The solid{endash}solution of layered perovskite materials helped us to significantly improve the ferroelectric properties, higher P{sub r} and higher T{sub c}, compared to SrBi{sub 2}Ta{sub 2}O{sub 9}; a leading candidate material for memory applications. For example, the films with 0.7 SrBi{sub 2}Ta{sub 2}O{sub 9}{endash}0.3Bi{sub 3}TiTaO{sub 9} composition and annealed in the temperature range 650{endash}750{degree}C exhibited 2P{sub r} and E{sub c} values in the range 12.4{endash}27.8 {mu}C/cm{sup 2} and 68{endash}80 kV/cm, respectively. The leakage current density was lower than 10{sup {minus}8} A/cm{sup 2} at an applied electric field of 200 kV/cm. The films exhibited good fatigue characteristics under bipolar stressing. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 538373
- Journal Information:
- Applied Physics Letters, Vol. 71, Issue 8; Other Information: PBD: Aug 1997
- Country of Publication:
- United States
- Language:
- English
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