Structural and ferroelectric properties of the {ital c}-axis oriented SrBi{sub 2}Ta{sub 2}O{sub 9} thin films deposited by the radio-frequency magnetron sputtering

Journal Article · Sun Dec 01 04:00:00 EST 1996 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.117122· OSTI ID:399759

Song, T K; Lee, J; Jung, H J ^[1]

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1. Division of Ceramics, Korea Institute of Science and Technology, Seoul 130-650 (Korea)

Radio-frequency magnetron sputtering was used to deposit SrBi{sub 2}Ta{sub 2}O{sub 9} ferroelectric thin films on Pt(111)/Ti/SiO{sub 2}/Si(001) substrates. Thin films were deposited at room temperature with argon pressures of 0.5{endash}100 mTorr and with sputtering power of 2.5 W/cm{sup 2}. The crystal orientations of thin films were strongly affected by the argon pressures, the {ital c}-axis oriented SrBi{sub 2}Ta{sub 2}O{sub 9} thin film was obtained with argon pressure of 30 mTorr. The crystal structures of the {ital c}-axis oriented SrBi{sub 2}Ta{sub 2}O{sub 9} thin film were investigated by x-ray diffraction methods: {theta}-2{theta} scan, rocking curve, and {phi} scans. The well aligned microstructure was observed with the average grain size of about 2000 A in an atomic force microscopic image. Ferroelectric properties were observed for the {ital c}-axis oriented thin film: {ital P}{sub {ital r}}{sup {asterisk}}{minus}{ital P}{sub {ital r}}{sup {Lambda}} and {ital E}{sub {ital c}} were 9.7 {mu}C/cm{sup 2} and 50 kV/cm, respectively, with excitation voltage of 3 V. {copyright} {ital 1996 American Institute of Physics.}

• OSTI ID: 399759
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 25 Vol. 69; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BISMUTH OXIDES
CRYSTAL STRUCTURE
FERROELECTRIC MATERIALS
GRAIN SIZE
SPUTTERING
STRONTIUM OXIDES
TANTALUM OXIDES
THIN FILMS
X-RAY DIFFRACTION