Extended x-ray absorption fine structure and x-ray diffraction study of strain and bond distortions in epitaxial semiconductor layers

Journal Article · Mon Jul 01 04:00:00 EDT 1991 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

DOI:https://doi.org/10.1116/1.585763· OSTI ID:5328533

Woicik, J C

Extended x-ray absorption fine structure and x-ray diffraction have determined the strain and bond distortions in epitaxial Ge{sub {ital x}}Si{sub 1{minus}{ital x}} on Si(001). In a 31% Ge, 340 A pseudomorphic Ge{sub {ital x}}Si{sub 1{minus}{ital x}} film, the Ge--Ge and Ge--Si first-neighbor bond lengths have been found to be 2.44{plus minus}0.02 and 2.38{plus minus}0.02 A, respectively. The lattice parameter perpendicular to the Ge{sub {ital x}}Si{sub 1{minus}{ital x}}/Si(001) interface has been found to be {ital a}{sub {perpendicular}}=5.553{plus minus}0.002 A. These results show that the bond length strain in epitaxial semiconductor layers appears primarily in the second and higher coordination shells, rather than in the nearest-neighbor bond lengths which remain the same as in the unstrained materials. A microscopic model is presented which accounts for these findings.

• DOE Contract Number: AC02-76CH00016
• OSTI ID: 5328533
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 9:4; ISSN 0734-211X; ISSN JVTBD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ABSORPTION SPECTRA
ALLOYS
CHEMICAL BONDS
COHERENT SCATTERING
CRYSTAL STRUCTURE
DIFFRACTION
ELEMENTS
EPITAXY
FINE STRUCTURE
GERMANIUM ALLOYS
LATTICE PARAMETERS
MATHEMATICAL MODELS
MICROSTRUCTURE
SCATTERING
SEMIMETALS
SILICON
SILICON ALLOYS
SPECTRA
STRAINS
SUBSTRATES
X-RAY DIFFRACTION
X-RAY SPECTRA