Real-time x-ray diffraction observation of a pin-slip mechanism in Ge sub x Si sub 1 minus x strained layers

Journal Article · Mon Oct 28 04:00:00 EST 1991 · Physical Review Letters; (United States)

DOI:https://doi.org/10.1103/PhysRevLett.67.2513· OSTI ID:5049763

Lowe, W; MacHarrie, R A; Bean, J C; Peticolas, L ^[1]; Clarke, R; Dos Passos, W ^[2]; Brizard, C; Rodricks, B ^[3]

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1. AT T Bell Laboratories, Murray Hill, New Jersey (USA)
2. Randall Laboratory of Physics, University of Michigan, Ann Arbor, Michigan (USA)
3. Advanced Photon Source Division, Argonne National Laboratory, Argonne, Illinois (USA)

Steplike behavior of the perpendicular lattice strain in Ge{sub {ital x}}Si{sub 1{minus}{ital x}} alloy layers, grown epitaxially on Si(001), is revealed by real-time x-ray scattering during rapid thermal annealing. A cooperative pin-slip mechanism is proposed which accounts for the observed kinetic effects including the coexistence of domains with different states of strain.

• Research Organization: Argonne National Laboratory (ANL), Argonne, IL
• DOE Contract Number: W-31109-ENG-38; AC02-76CH00016
• OSTI ID: 5049763
• Journal Information: Physical Review Letters; (United States), Journal Name: Physical Review Letters; (United States) Vol. 67:18; ISSN PRLTA; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360603* -- Materials-- Properties
ANNEALING
COHERENT SCATTERING
DIFFRACTION
DOMAIN STRUCTURE
ELEMENTS
EPITAXY
GERMANIUM COMPOUNDS
GERMANIUM SILICIDES
HEAT TREATMENTS
INTERFACES
MOLECULAR BEAM EPITAXY
REAL TIME SYSTEMS
RELAXATION
SCATTERING
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
STRAINS
STRESS RELAXATION
SURFACE PROPERTIES
X-RAY DIFFRACTION