Polyacetylene, (CH)/sub x/, as an emerging material for solar cell applications. Second quarterly technical progress report, July-September 1979
As of the starting date of this contract, a variety of rectifying junctions had been fabricated using doped and undoped (CH)/sub x/. Schottky diodes formed between metallic AsF/sub 5/-doped (CH)/sub x/ and n-type semiconductors indicate high (CH(AsF/sub 5/)/sub y/)/sub x/ electronegativity. The p-type character of undoped trans-(CH)/sub x/ was confirmed by Schottky barrier formation with low work function metals. An undoped p-(CH)/sub x/:n--ZnS heterojunction solar cell has been demonstrated with open circuit photovoltage of 0.8 V. These results point to the potential of (CH)/sub x/ as a photosensitive material for use in solar cell applications. The devices fabricated in initial experiments fall into three categories: 1) Schottky diodes utilizing heavily doped (CH)/sub x/ as a metallic electrode on a variety of n-type semiconductors, 2) Schottky diodes utilizing undoped (CH)/sub x/ as a p-type semiconductor on which metallic contacts are placed, and 3) p-n heterojunction diodes formed at the inferface of undoped p-type (CH)/sub x/ on n-ZnS. Progress is reported. (WHK)
- Research Organization:
- Pennsylvania Univ., Philadelphia (USA)
- DOE Contract Number:
- AC04-79ET23002
- OSTI ID:
- 5324649
- Report Number(s):
- DOE/ET/23002-T3
- Country of Publication:
- United States
- Language:
- English
Similar Records
Polyacetylene, (CH)/sub x/, as an emerging material for solar cell applications. Technical progress report, April-June, 1979
Semiconductor properties of polyacetylene p-(CH)/sub x/ : n-CdS heterojunctions
Polyacetylene, (CH)/sub x/, as an emerging material for solar cell applications. Technical progress report, October, November, December 1979
Technical Report
·
Fri Jul 27 20:00:00 EDT 1979
·
OSTI ID:5747373
Semiconductor properties of polyacetylene p-(CH)/sub x/ : n-CdS heterojunctions
Journal Article
·
Thu Jul 31 20:00:00 EDT 1980
· J. Appl. Phys.; (United States)
·
OSTI ID:5220559
Polyacetylene, (CH)/sub x/, as an emerging material for solar cell applications. Technical progress report, October, November, December 1979
Technical Report
·
Wed Feb 13 19:00:00 EST 1980
·
OSTI ID:5430541
Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360401 -- Polymers & Plastics-- Preparation & Fabrication-- (-1987)
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CHEMICAL REACTIONS
DIRECT ENERGY CONVERTERS
ELECTRICAL PROPERTIES
ELECTRODES
EQUIPMENT
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INORGANIC PHOSPHORS
JUNCTIONS
MATERIALS
N-TYPE CONDUCTORS
ORGANIC COMPOUNDS
ORGANIC POLYMERS
ORGANIC SOLAR CELLS
P-N JUNCTIONS
P-TYPE CONDUCTORS
PERFORMANCE
PHOSPHORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PNICTIDES
POLYMERIZATION
POLYMERS
RESEARCH PROGRAMS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT
SPECTRAL RESPONSE
SULFIDES
SULFUR COMPOUNDS
ZINC COMPOUNDS
ZINC SULFIDES
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360401 -- Polymers & Plastics-- Preparation & Fabrication-- (-1987)
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CHEMICAL REACTIONS
DIRECT ENERGY CONVERTERS
ELECTRICAL PROPERTIES
ELECTRODES
EQUIPMENT
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INORGANIC PHOSPHORS
JUNCTIONS
MATERIALS
N-TYPE CONDUCTORS
ORGANIC COMPOUNDS
ORGANIC POLYMERS
ORGANIC SOLAR CELLS
P-N JUNCTIONS
P-TYPE CONDUCTORS
PERFORMANCE
PHOSPHORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PNICTIDES
POLYMERIZATION
POLYMERS
RESEARCH PROGRAMS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT
SPECTRAL RESPONSE
SULFIDES
SULFUR COMPOUNDS
ZINC COMPOUNDS
ZINC SULFIDES