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Title: Polyacetylene, (CH)/sub x/, as an emerging material for solar cell applications. Second quarterly technical progress report, July-September 1979

Technical Report ·
DOI:https://doi.org/10.2172/5324649· OSTI ID:5324649

As of the starting date of this contract, a variety of rectifying junctions had been fabricated using doped and undoped (CH)/sub x/. Schottky diodes formed between metallic AsF/sub 5/-doped (CH)/sub x/ and n-type semiconductors indicate high (CH(AsF/sub 5/)/sub y/)/sub x/ electronegativity. The p-type character of undoped trans-(CH)/sub x/ was confirmed by Schottky barrier formation with low work function metals. An undoped p-(CH)/sub x/:n--ZnS heterojunction solar cell has been demonstrated with open circuit photovoltage of 0.8 V. These results point to the potential of (CH)/sub x/ as a photosensitive material for use in solar cell applications. The devices fabricated in initial experiments fall into three categories: 1) Schottky diodes utilizing heavily doped (CH)/sub x/ as a metallic electrode on a variety of n-type semiconductors, 2) Schottky diodes utilizing undoped (CH)/sub x/ as a p-type semiconductor on which metallic contacts are placed, and 3) p-n heterojunction diodes formed at the inferface of undoped p-type (CH)/sub x/ on n-ZnS. Progress is reported. (WHK)

Research Organization:
Univ. of Pennsylvania, Philadelphia, PA (United States)
DOE Contract Number:
AC04-79ET23002
OSTI ID:
5324649
Report Number(s):
DOE/ET/23002-T3
Country of Publication:
United States
Language:
English