Semiconductor properties of polyacetylene p-(CH)/sub x/ : n-CdS heterojunctions

Journal Article · Fri Aug 01 00:00:00 EDT 1980 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.328241· OSTI ID:5220559

Ozaki, M; Peebles, D; Weinberger, B R; Heeger, A J; MacDiarmid, A G

Trans:(CH)/sub x/:n-CdS heterojunctions have been fabricated and used to study the properties of undoped trans-polyacetylene. The I-V data show rectifying behavior characteristic of a p-n junction diode, thus confirming that as-grown polyacetylene is p type. From C-V characteristics we infer a residual acceptor concentration in as-grown films of p-(CH)/sub x/ of N/sub A/approx. =2 x 10/sup 18/ cm/sup -3/. Depletion has been studied in the polymer by using CdS of different doping concentrations. Detailed studies of the photovoltaic response at energies below E/sub g/ for (CH)/sub x/ imply the existence of a meta-stable deep trap in the polymer with energy near the center of the gap. The threshold energy for pumping into this level provides an independent measurement of the energy gap, E/sub g/=1.45 eV.

• Research Organization: Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, Pennsylvania 19104
• DOE Contract Number: AC04-79ET23002
• OSTI ID: 5220559
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 51:8; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
CADMIUM COMPOUNDS
CADMIUM SULFIDES
CHALCOGENIDES
DATA
DOPED MATERIALS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ENERGY GAP
ENERGY LEVELS
EQUIPMENT
FABRICATION
INFORMATION
INORGANIC PHOSPHORS
JUNCTIONS
MATERIALS
ORGANIC COMPOUNDS
P-N JUNCTIONS
P-TYPE CONDUCTORS
PHOSPHORS
PHOTOVOLTAIC EFFECT
PHYSICAL PROPERTIES
QUANTITY RATIO
RECTIFIERS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SULFIDES
SULFUR COMPOUNDS
TRAPS