Carbon doping and etching of Al{sub x}Ga{sub 1{minus}x}As (0{le}x{le}1) with carbon tetrachloride in metalorganic vapor phase epitaxy
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
Carbon doping and the parasitic growth-rate reduction with carbon-tetrachloride (CCl{sub 4}) in Al{sub x}Ga{sub 1{minus}x}As was studied in the entire Al composition range for metalorganic vapor phase epitaxial growth. The doping efficiency in AlGaAs was found to increase by two orders of magnitude when the Al composition in Al{sub x}Ga{sub 1{minus}x}As changed from 0 to 1. The parasitic growth rate reduction, however, decreased by a factor of 15 when x changed from 0 to 1. This reduction of growth rate was confirmed to be caused by the etching of the material from the surface by Cl radicals cracked from CCl{sub 4}. This strong compositional selectivity of the doping and etching has potential implications for lateral definition of growth on patterned surfaces. The doping and etching behaviors were also studied as a function of the growth temperature. {copyright} {ital 1997 American Institute of Physics.}
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 531692
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 26 Vol. 70; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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