High frequency measurements of integrated circuit devices and interconnect
Microwave and high-speed VLSI integrated circuits will play a pivotal role in the development of fifth generation computers, defense electronics, robotics, and advanced satellite communication systems. The characterization of the microwave and high-speed circuits devices is an essential part of circuit modeling and design. This thesis reports research results concerning high-frequency measurement techniques used for the characterization and modeling of integrated circuit devices and interconnecting transmission lines. Two microwave techniques have been available for high-speed semiconductor device characterization. These are s-parameter measurements and sampling oscilloscope measurements. The use of these techniques for semiconductor device measurements is presented. A new technique for the time-domain characterization of integrated circuit devices and interconnected was created. This technique used photoconductors with picosecond pulsing and sampling speeds that were integrated on the silicon substrate in order to perform high-speed measurements. The capabilities of the picosecond photoconductor measurement techniques are compared to the sampling oscilloscope time-domain and s-parameter measurements.
- Research Organization:
- Stanford Univ., CA (USA)
- OSTI ID:
- 5310864
- Country of Publication:
- United States
- Language:
- English
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