Damage assessment in low-dose Si-implanted GaAs by Raman spectroscopy

Journal Article · Mon Apr 04 04:00:00 EDT 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99191· OSTI ID:5310519

Wagner, J

Allowed and forbidden first-order as well as resonant second-order Raman scattering has been used to study implantation damage in low-dose (5 x 10/sup 11/--1 x 10/sup 13/ cm/sup -2/) /sup 29/Si/sup +/-implanted GaAs. Symmetry forbidden scattering by longitudinal optical (LO) phonons and allowed 2LO scattering were found to be most sensitive to lattice damage for the range of implantation doses given above. The intensity ratio of the 2LO peak to the forbidden LO phonon line measures variations in the implantation dose with an accuracy better than +- 7% for an average dose of 2 x 10/sup 12/ cm/sup -2/. The potential of spatially resolved Raman spectroscopy for the assessment of homogeneity in as-implanted GaAs wafers has been demonstrated.

• Research Organization: Fraunhofer-Institut fuer Angewandte Festkoerperphysik, Eckerstrasse 4, 7800 Freiburg, West Germany
• OSTI ID: 5310519
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 52:14; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
DAMAGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
ION IMPLANTATION
IONS
LASER SPECTROSCOPY
PHONONS
PHYSICAL RADIATION EFFECTS
PNICTIDES
QUASI PARTICLES
RADIATION EFFECTS
RAMAN SPECTROSCOPY
SILICON IONS
SPECTROSCOPY