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Resonant Raman scattering of In/sup +/-implanted CdTe and Cd/sub 0. 23/Hg/sub 0. 77/Te

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.101295· OSTI ID:6291416
In/sup +/ -implanted CdTe and Cd/sub 0.23/ Hg/sub 0.77/ Te have been studied by resonant Raman scattering. Dipole-forbidden but defect-induced scattering by one longitudinal optical (LO) phonon as well as Froehlich-induced two-LO phonon scattering is strongly affected by implantation of 350 keV In/sup +/ with doses ranging from 10/sup 11/ to 5 x 10/sup 14/ ions/cm/sup 2/ . The intensity ratio of the one-LO and the two-LO phonon lines is found to be a measure of the implantation damage in CdTe and in the alloy Cd/sub 0.23/ Hg/sub 0.77/ Te. The observed implantation effects on resonant Raman scattering by LO phonons are due to a broadening and an energy shift of the corresponding resonances as demonstrated for the E/sub 0/ +..delta../sub 0/ gap resonance in CdTe.
Research Organization:
Fraunhofer-Institut fuer Angewandte Festkoerperphysik, Eckerstrasse 4, 7800 Freiburg, West Germany
OSTI ID:
6291416
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:18; ISSN APPLA
Country of Publication:
United States
Language:
English