Raman study of damage processes in Si{sup +}-implanted GaAs

Conference · Thu Sep 01 04:00:00 EDT 1994

OSTI ID:10113202

Ivanda, M; Desnica, U V ^[1]; Haynes, T E ^[2]; Hartmann, I; Kiefer, W ^[3]

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1. Institut Rudjer Boskovic, Zagreb (Croatia)
2. Oak Ridge National Lab., TN (United States)
3. Wuerzburg Univ. (Germany). Inst. fuer Physikalische Chemie

Ion-induced damage in GaAs as a function of ion dose following 100 keV Si{sup +} implants has been investigated by Raman spectroscopy. A new approach for decomposition of Raman scattering intensity on to the crystalline and amorphous phase components has been used in analysis of Raman spectra. With increasing ion dose the following was observed: (a) the widths of vibrational bands of a-phase significantly increase, while the width of the LO({Gamma}) phonon band of c-phase remains unchanged; (b) the longitudinal optical phonon band of c-phase completely dissappears, while the transverse optical phonon mode evolves in to a new band of a-phase; (c) the wavenumbers of all vibrational bands of a- and c-phase shift to lower values by {approximately} 10--15 cm{sup {minus}1}. A number of mechanisms possibly accountable for these shifts were analysed and evaluated.

• Research Organization: Oak Ridge National Lab., TN (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States); Commission of the European Communities, Brussels (Belgium); Ministry of Science and Technology of Croatia (Croatia)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 10113202
• Report Number(s): CONF-940903--1; ON: DE95005898; CNN: Contract ERBCIPACT 92-2095
• Country of Publication: United States
• Language: English

Related Subjects

665300
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DAMAGE
GALLIUM ARSENIDES
INTERACTIONS BETWEEN BEAMS AND CONDENSED MATTER
ION IMPLANTATION
RAMAN EFFECT
RAMAN SPECTROSCOPY
SILICON IONS