High-optical-quality GaInP and GaInP/AlInP double heterostructure lasers grown on GaAs substrates by gas-source molecular-beam epitaxy

Journal Article · Wed Nov 01 04:00:00 EST 1989 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.343930· OSTI ID:5295304

Kikuchi, A; Kishino, K; Kaneko, Y ^[1]

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1. Department of Electrical and Electronics Engineering, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102, Japan (JP)

By gas-source molecular-beam epitaxy, we obtained a device-quality GaInP epitaxial layer lattice matched to (100)-GaAs substrates, with a photoluminescence efficiency comparable to that of a crystal grown by liquid-phase epitaxy. A GaInP/AlInP double heterostructure laser with a GaInP active layer was fabricated, and pulsed lasing operation was achieved at room temperature for, we believe, the first time.

• OSTI ID: 5295304
• Journal Information: Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 66:9; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM COMPOUNDS
ALUMINIUM PHOSPHIDES
ARSENIC COMPOUNDS
ARSENIDES
EFFICIENCY
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
LUMINESCENCE
MEDIUM TEMPERATURE
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
PULSES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SUBSTRATES