AlInP-passivated III–V solar cells grown by dynamic hydride vapor-phase epitaxy

Boyer, Jacob T.; Schulte, Kevin L.; Young, Matthew R.; Ptak, Aaron J.; Simon, John

doi:10.1002/pip.3629

AlInP-passivated III–V solar cells grown by dynamic hydride vapor-phase epitaxy

Journal Article · Sun Oct 02 00:00:00 EDT 2022 · Progress in Photovoltaics

DOI:https://doi.org/10.1002/pip.3629· OSTI ID:1892302

^[1]; ^[1]; Young, Matthew R. ^[1]; ^[1]; ^[1]

National Renewable Energy Lab. (NREL), Golden, CO (United States)

We report the development of AlInP-passivated solar cells grown by dynamic hydride vapor-phase epitaxy (D-HVPE) with AM1.5G efficiencies of 26.0% for single-junction (1J) GaAs cells and 28.0% for GaInP/GaAs (2J) tandems. We compare the device performance of solar cells passivated with AlInP versus control cells passivated with GaInP, which has already enabled near-unity carrier collection in GaAs solar cells. 1J devices passivated with either AlInP or GaInP have an identical open-circuit voltage (V_OC) of 1.06 V and long-wavelength current collection near 95%, indicating that both window materials provide a similar degree of passivation. Adding AlInP passivation to each solar cell structure improves the current collection by 1.3 and 1 mA/cm² for the 1J and 2J, respectively. The AlInP also results in a top cell V_OC boost of ~40 mV relative to a tandem device passivated only by a thin, highly doped GaInP emitter. Secondary-ion mass spectrometry measurements indicate that although O and Si both incorporate in the AlInP window, they do not appear in the subsequently grown absorber layers and do not impact its ability to passivate the front surface. We expect that these achievements, along with continued optimization, will enable parity of hydride vapor-phase epitaxy (HVPE)-grown device efficiencies with state-of-the-art devices grown by other epitaxial methods in the near future.

View Accepted Manuscript (DOE)

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: U.S. Department of Defense (DoD); USDOE; USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1892302

Alternate ID(s):: OSTI ID: 1922982

Report Number(s):: NREL/JA-5900-82072; MainId:82845; UUID:b04d8f8f-baf3-4507-8823-94b5c26b6d45; MainAdminID:67545

Journal Information:: Progress in Photovoltaics, Journal Name: Progress in Photovoltaics Journal Issue: 3 Vol. 31; ISSN 1062-7995

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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14 SOLAR ENERGY
AlInP
D-HVPE
III-V
PV
dynamic hydride vapor phase epitaxy
passivated
photovoltaics
solar cell

AlInP-passivated III–V solar cells grown by dynamic hydride vapor-phase epitaxy

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