AlGaInP double heterostructure visible-light laser diodes with a GaInP active layer grown by metalorganic vapor phase epitaxy

Journal Article · Mon Jun 01 00:00:00 EDT 1987 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1987.1073424· OSTI ID:6362074

Kobayashi, K; Hino, I; Gomyo, A; Kawata, S; Suzuki, T

AlGaInP double heterostructure laser diodes with a GaInP active layer constitute a basic laser structure for visible-light lasers using an AlGaInP alloy system. This paper gives a detailed description of (Al/sub x/Ga/sub 1 - x/)/sub 0.5/In/sub 0.5/P metalorganic vapor phase epitaxial growth, laser-fabrication processes, and basic device-characteristics for these lasers. The obtained pulsed-threshold-current was about 3.8 kA/cm/sup 2/(3.2 kA/cm/sup 2/ minimum) for laser diodes with an 8-10 /n//m wide and 150-300 ..mu..m long injection stripe. High characteristic-temperature T/sub o/ for the temperature dependence of pulsed threshold current was obtained and was found to be dependent on band-gap-energy differences between active layers and cladding layers. The maximum value for T/sub o/ was 222 K. The lasing wavelength of an AlGaInP double heterostructure laser diode with a GaInP active layer was found to depend on growth conditions and dopant behaviour during the growth, and it varied in a range from 664 to 690 mm, while the GaInP active layers were lattice-matched to GaAs substrates.

• Research Organization: Opto-Electronics Research Labs., NEC Corp., Kawasaki, Kanagawa 213
• OSTI ID: 6362074
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-23:6; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM COMPOUNDS
ALUMINIUM PHOSPHIDES
CRYSTAL GROWTH
CURRENTS
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
EPITAXY
FABRICATION
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
GRADED BAND GAPS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
PULSES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
TEMPERATURE DEPENDENCE
THRESHOLD CURRENT
VAPOR PHASE EPITAXY
VISIBLE RADIATION