Room-temperature pulsed operation of AlGaInP/GaInP/AlGaInP double heterostructure visible light laser diodes grown by metalorganic chemical vapor deposition

Journal Article · Wed Nov 30 23:00:00 EST 1983 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94206· OSTI ID:5482878

Hino, I; Gomyo, A; Kobayashi, K; Suzuki, T; Nishida, K

Room-temperature pulsed laser operation of (Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/In/sub 0.5/P/ Ga/sub 0.5/In/sub 0.5/P/ (Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/In/sub 0.5/P double heterostructure laser diodes grown by metalorganic chemical vapor deposition has been achieved for the first time. The lowest threshold current density was 26 kA/cm/sup 2/ for a diode with a 22-..mu..m-wide and 160-..mu..m-long stripe. The lasing wavelength was 0.683 ..mu..m.

• Research Organization: Opto-Electronics Research Laboratories, NEC Corporation, 1-1, Miyazaki 4-chome, Miyamae-ku, Kawasaki 213, Japan
• OSTI ID: 5482878
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 43:11; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM COMPOUNDS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DATA
DEPOSITION
ELECTROMAGNETIC RADIATION
EMISSION
ENERGY
ENERGY-LEVEL TRANSITIONS
EXPERIMENTAL DATA
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM COMPOUNDS
INFORMATION
JUNCTIONS
LASERS
MEDIUM TEMPERATURE
NUMERICAL DATA
OPERATION
PHOSPHORUS COMPOUNDS
PULSES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
STIMULATED EMISSION
SURFACE COATING
THRESHOLD ENERGY
VISIBLE RADIATION