Tungsten- or molybdenum-coated p-n junction silicon electrodes for efficient and stable photoelectrochemical solar energy conversion
Journal Article
·
· J. Electrochem. Soc.; (United States)
Current-potential characteristics and long-term stability for p/sup +/n-junction silicon electrodes coated with a thin layer of tungsten or molybdenum and heat-treated at 740/sup 0/-830/sup 0/C were investigated in a hydrogen iodide/iodine solution. The p/sup +/ n-Si electrodes were exposed to air for more than 10h before the metal deposition. These electrodes gave current-potential curves nearly as good as those for the previously reported platinum-coated p/sup +/n-Si electrodes. The photocurrents at the maximum power point in both cases of the W and Mo coating showed no decay after continued illumination of more than 4500h, in contrast to the case of the Pt coating.
- Research Organization:
- Lab. for Chemical Conversion of Solar Energy and Dept. of Chemistry, Faculty of Engineering Science, Osaka Univ., Toyonaka, Osaka 560
- OSTI ID:
- 5295216
- Journal Information:
- J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 133:5; ISSN JESOA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Hydrogen evolution and iodine reduction on an illuminated n-p junction silicon electrode and its application to efficient solar photoelectrolysis of hydrogen iodide
N-type amorphous (or microcrystalline) silicon/p-type crystalline silicon heterojunction electrodes for efficient and stable solar-to-chemical conversion
Photoelectrochemical conversion in a WO{sub 3} coated p-Si photoelectrode: Effect of annealing temperature
Journal Article
·
Thu Sep 13 00:00:00 EDT 1984
· J. Phys. Chem.; (United States)
·
OSTI ID:6167697
N-type amorphous (or microcrystalline) silicon/p-type crystalline silicon heterojunction electrodes for efficient and stable solar-to-chemical conversion
Journal Article
·
Mon Aug 01 00:00:00 EDT 1988
· J. Appl. Phys.; (United States)
·
OSTI ID:7201210
Photoelectrochemical conversion in a WO{sub 3} coated p-Si photoelectrode: Effect of annealing temperature
Journal Article
·
Thu May 01 00:00:00 EDT 1997
· Journal of Applied Physics
·
OSTI ID:496388
Related Subjects
14 SOLAR ENERGY
140505* -- Solar Energy Conversion-- Photochemical
Photobiological
& Thermochemical Conversion-- (1980-)
AIR
COATINGS
CURRENTS
DEPOSITION
DIAGRAMS
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
ELECTROCHEMICAL CELLS
ELECTRODES
ELEMENTS
EQUIPMENT
FLUIDS
GASES
HALOGEN COMPOUNDS
HALOGENS
HEAT TREATMENTS
HYDRIODIC ACID
HYDROGEN COMPOUNDS
ILLUMINANCE
INORGANIC ACIDS
IODINE
IODINE COMPOUNDS
JUNCTIONS
METALS
MOLYBDENUM
NONMETALS
P-N JUNCTIONS
PHOTOCURRENTS
PHOTOELECTROCHEMICAL CELLS
PHYSICAL PROPERTIES
PLATINUM
PLATINUM METALS
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SOLAR EQUIPMENT
STABILITY
TRANSITION ELEMENTS
TUNGSTEN
VERY HIGH TEMPERATURE
140505* -- Solar Energy Conversion-- Photochemical
Photobiological
& Thermochemical Conversion-- (1980-)
AIR
COATINGS
CURRENTS
DEPOSITION
DIAGRAMS
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
ELECTROCHEMICAL CELLS
ELECTRODES
ELEMENTS
EQUIPMENT
FLUIDS
GASES
HALOGEN COMPOUNDS
HALOGENS
HEAT TREATMENTS
HYDRIODIC ACID
HYDROGEN COMPOUNDS
ILLUMINANCE
INORGANIC ACIDS
IODINE
IODINE COMPOUNDS
JUNCTIONS
METALS
MOLYBDENUM
NONMETALS
P-N JUNCTIONS
PHOTOCURRENTS
PHOTOELECTROCHEMICAL CELLS
PHYSICAL PROPERTIES
PLATINUM
PLATINUM METALS
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SOLAR EQUIPMENT
STABILITY
TRANSITION ELEMENTS
TUNGSTEN
VERY HIGH TEMPERATURE