Photoelectrochemical conversion in a WO{sub 3} coated p-Si photoelectrode: Effect of annealing temperature

Journal Article · Thu May 01 04:00:00 UTC 1997 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.365268· OSTI ID:496388

Yoon, K H; Shin, C W; Kang, D H ^[1]

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1. Department of Ceramic Engineering, Yonsei University, Seoul 120-749 (Korea)

The photoelectrochemical properties of a p-type silicon (100) electrode coated with tungsten oxide thin film were investigated as a function of annealing temperature. The variation in the annealing temperature affected the photocurrent of a WO{sub 3}/p-Si electrode. A maximum photocurrent was obtained when the 500 {Angstrom} WO{sub 3} thin film coated p-Si electrode was annealed at 350{degree}C for 1 h. A further increase in the annealing temperature and film thickness degraded the photocurrent. This can be explained in terms of electrical resistivity, carrier concentration, and depletion layer width. A WO{sub 3} thin film deposition on the p-Si shifted the flatband potential of the p-Si electrode by 0.3 V in the anodic direction, resulting in an improvement in conversion efficiency. These results are supported by x-ray diffraction, Auger electron spectroscopy, and capacitance measurements. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 496388
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 81; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
ANNEALING
AUGER EFFECT
CARRIER DENSITY
ELECTRIC CONDUCTIVITY
ELECTRODES
PHASE STUDIES
PHOTOCONDUCTIVITY
PHOTOCURRENTS
PHOTOELECTROCHEMICAL CELLS
SILICON
TEMPERATURE DEPENDENCE
THIN FILMS
TUNGSTEN COMPOUNDS
TUNGSTEN OXIDES
X-RAY DIFFRACTION