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N-type amorphous (or microcrystalline) silicon/p-type crystalline silicon heterojunction electrodes for efficient and stable solar-to-chemical conversion

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.341826· OSTI ID:7201210
Silicon (Si) electrodes having a n-p heterojunction for hydrogen photoevolution were prepared by depositing n-type amorphous or microcrystalline Si layers on p-type single-crystal Si wafers by the plasma chemical-vapor-deposition method. Electrodes of this type, each coated with a thin platinum layer (about 1 nm) as a reaction catalyst, generated photocurrents much higher than those for Pt-coated n/sup +/ -p homojunction single-crystal Si electrodes, together with photovoltages nearly the same as those for the latter electrodes, clearly indicating the ''window'' effect of the n-type amorphous or microcrystalline Si layer. A photoelectrochemical cell equipped with a Si electrode of the present type and a Pt-plate counterelectrode, separated with a cation exchange membrane, photodecomposed hydrogen iodide into hydrogen and iodine with a solar-to-chemical conversion efficiency of 10.8% (air mass 1, 100 mW/cm/sup 2/ ), the highest of the efficiencies so far reported for the direct solar-to-chemical conversion without any externally applied voltage.
Research Organization:
Laboratory for Chemical Conversion of Solar Energy and Department of Chemistry, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
OSTI ID:
7201210
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 64:3; ISSN JAPIA
Country of Publication:
United States
Language:
English