A study of lattice damage in silicon induced by BF sup + sub 2 ion implantation

Journal Article · Tue Oct 15 00:00:00 EDT 1991 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.349141· OSTI ID:5290822

Paek, M C; Kwon, O J ^[1]; Lee, J Y; Im, H B ^[2]

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1. Materials and Characterization Section, Semiconductor Division, Electronics and Telecommunications Research Institute, P.O. Box 8, Daedog Danji, Daejeon (Korea)
2. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, P.O. Box 131, Chongryang, Seoul (Korea)

Lattice damages induced by BF{sup +}{sub 2} ion implantation in single-crystalline silicon have been analyzed using secondary-ion mass spectrometry, ion channeling technique in Rutherford backscattering spectroscopy, and transmission electron microscopy. Concentration depth profiles of boron and fluorine showed the same values of projection range 400 A at all doses for 50-keV energy. A considerable amount of damage was formed in the silicon lattice and the surface region of the substrate was amorphized when the dosage exceeded a critical value, which was determined to be 8.0 {times} 10{sup 14}/cm{sup 2} experimental dose. The amorphized layer showed a clear boundary to the crystalline silicon, which contains severely damaged regions identified to be microamorphous clusters. He{sup 2+} ion channeling data revealed that the integrated damage in implanted layers increases linearly with dosage up to the critical dose and increases with a much smaller rate with further increase in the dosage. It is suggested that the integrated damage shows a smaller damage rate once the surface was amorphized because there can be no further increase of lattice damage in the amorphous layer. The calculated values of the integrated damage based on a model for damage formation agree well with the measured ones.

• OSTI ID: 5290822
• Journal Information: Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 70:8; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
BORON COMPOUNDS
BORON FLUORIDES
CHANNELING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTALS
ELECTRON MICROSCOPY
ELEMENTS
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
ION CHANNELING
ION IMPLANTATION
MATHEMATICAL MODELS
MICROSCOPY
MONOCRYSTALS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMIMETALS
SILICON
TRANSMISSION ELECTRON MICROSCOPY