Stability of oxides grown on tantalum silicide surfaces

Journal Article · Sat Nov 01 04:00:00 EST 1986 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.337699· OSTI ID:5283022

Cros, A; Tu, K N

The oxidation of TaSi/sub 2/ and Ta/sub 2/Si surfaces prepared under ultrahigh vacuum conditions has been studied by x-ray photoemission spectroscopy. For both silicides, Si and Ta oxides comprise the native oxide formed at room temperature. Annealing at 550 /sup 0/C induces a solid state reaction within the native oxide. Ta/sub 2/O/sub 5/ is partially decomposed, and the liberated oxygen bonds to Si. This reaction and the influence of the silicide stoichiometry are discussed.

• Research Organization: IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
• OSTI ID: 5283022
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 60:9; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360202* -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400201 -- Chemical & Physicochemical Properties
ANNEALING
CHALCOGENIDES
CHEMICAL REACTIONS
DECOMPOSITION
ELECTRON SPECTROSCOPY
HEAT TREATMENTS
OXIDATION
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRON SPECTROSCOPY
REFRACTORY METAL COMPOUNDS
SILICIDES
SILICON COMPOUNDS
SPECTROSCOPY
STABILITY
SYNTHESIS
TANTALUM COMPOUNDS
TANTALUM OXIDES
TANTALUM SILICIDES
TRANSITION ELEMENT COMPOUNDS