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Title: Pulsed ion beam source

Patent ·
OSTI ID:527753

An improved pulsed ion beam source is disclosed having a new biasing circuit for the fast magnetic field. This circuit provides for an initial negative bias for the field created by the fast coils in the ion beam source which pre-ionize the gas in the source, ionize the gas and deliver the gas to the proper position in the accelerating gap between the anode and cathode assemblies in the ion beam source. The initial negative bias improves the interaction between the location of the nulls in the composite magnetic field in the ion beam source and the position of the gas for pre-ionization and ionization into the plasma as well as final positioning of the plasma in the accelerating gap. Improvements to the construction of the flux excluders in the anode assembly are also accomplished by fabricating them as layered structures with a high melting point, low conductivity material on the outsides with a high conductivity material in the center. 12 figs.

Research Organization:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corp., Albuquerque, NM (United States)
Patent Number(s):
US 5,656,819/A/
Application Number:
PAN: 8-657,727; TRN: 97:016699
OSTI ID:
527753
Resource Relation:
Other Information: PBD: 12 Aug 1997
Country of Publication:
United States
Language:
English

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