Optoelectronic properties of thin amorphous and micro-crystalline p-type films developed for amorphous silicon-based solar cells
Book
·
OSTI ID:527729
- Forschungszentrum Juelich GmbH (Germany)
- State Univ. of New York, Stony Brook, NY (United States)
VHF-PECVD at 110 MHz was used to deposit micro-crystalline p-layers on glass substrates for detailed analysis and onto ZnO coated substrates for incorporation into p-i-n solar cell structures. Solar cell and film analysis confirmed that the films incorporated into the solar cells contained significant crystalline silicon volume fractions despite being only 30 nm thick. The p-i-n solar cells employing a micro-crystalline silicon p-layer deposited on ZnO coated substrates had series resistances, fill factors and V{sub OC} similar to those of the reference solar cells deposited onto SnO{sub 2} coated substrates and having optimized amorphous silicon-carbon p-layers. The short circuit current of the micro-crystalline p-layer case was 10% lower than that of the reference cell indicating that further optimization is required.
- OSTI ID:
- 527729
- Report Number(s):
- CONF-960401--; ISBN 1-55899-323-1
- Country of Publication:
- United States
- Language:
- English
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