Thin p-type microcrystalline silicon film on various substrates
- Utrecht Univ. (Netherlands)
P-type microcrystalline layers can effectively replace the silicon carbide layers as the window layer of the p-I-n solar cells to increase built-in-potential and decrease series resistance. Thin (<20nm) p-type microcrystalline silicon films have been deposited by PECVD in an unusual parameter regime, specifically optimized for extremely thin films. High conductivity (>10{sup {minus}2} Scm{sup {minus}1}) and low activation energy (<0.08eV) of thin films have been achieved on various metal oxide substrates, i.e., Corning 7059 glass, SnO{sub 2}:F, TiO{sub 2} and Ta{sub 2}O{sub 5}. Crystallinity was confirmed by Raman spectroscopy and UV reflectance. Deposition of p-{micro}c-Si:H is possible on void rich films (a-SiC:H and low temperature deposited a-Si:H) but not on device quality a-Si:H. Cells made in a superstrate structure using p-{micro}c-Si:H as the window layer directly on top of SnO{sub 2}:F coated glass yielded 9.63% efficiency, with an improvement in the blue spectral response compared to the cell made with a-SiC:H(B) as window layer. Tandem cells (a-Si:H/a-Si:H) incorporating p-{micro}c-Si:H along with n-{micro}c-Si:H in the tunnel junction yielded 8.8% efficiency.
- OSTI ID:
- 527644
- Report Number(s):
- CONF-960401--; ISBN 1-55899-323-1
- Country of Publication:
- United States
- Language:
- English
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