Application of p-type microcrystalline silicon to a-Si alloy solar cells
Book
·
OSTI ID:208089
- Sharp Corp., Nara (Japan). Energy Conversion Labs.
Detailed studies by the RHEED method have clearly indicated that microcrystalline silicon ({micro}c-Si:H) films prepared with a conventional RF p-CVD system can be deposited from the thickness of 10nm even on a-SiC:H, a-SiGe:H alloy films and, furthermore, 25nm-thick films have almost the same crystallinity as the 200 nm-thick {micro}c-Si:H film. Application of this {micro}c-Si:H film to the p-layers of a-SiC:H and a-SiGe:H alloy solar cells have led to increases of 20 {approximately} 40 mV in Voc, compared to typical a-SiC:H p-layer cells. Analysis of the diode saturation currents have shown that these increases of Voc were due to the increases of the built-in potential of the cells.
- OSTI ID:
- 208089
- Report Number(s):
- CONF-941203--; ISBN 0-7803-1459-X
- Country of Publication:
- United States
- Language:
- English
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