Boron-carbide p-type layer for amorphous silicon solar cells

Journal Article · Mon Jul 01 04:00:00 EDT 1996 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.51130· OSTI ID:451095

Matsumoto, Y; Asomoza, R; Hirata, G; Cota-Araiza, L ^[1]

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1. Electronica del Estado Solido, Departamento de Ingenieria Electrica CINVESTAV-IPN, A.P.14--740, Mexico City, 07000 (Mexico)

Thin film p-i-n type hydrogenated amorphous silicon ({ital a}-Si:H) solar cells have been obtained using the conventional technique of plasma enhanced chemical vapor deposition (PECVD) employing only boron and carbon as a {open_quote}{open_quote}{ital p}{close_quote}{close_quote}-layer window. This layer was obtained using common gas sources of methane and diborane (CH{sub 4} & B{sub 2}H{sub 6}) and it has the properties of a {ital p}-type semiconductor, like amorphous silicon-carbide ({ital a}-Si:C). Auger electron spectroscopy was used to verify the boron carbon deposition on single crystalline silicon and SnO{sub 2} coated glass substrates. Solar cells made with total thickness of only 300 nm have short circuit current density of 13.3mA/cm{sup 2} with an open circuit voltage of 870 mV. The photoresponse of the cells, reveals that the improvement was due to the better response in the shorter wavelength region {copyright} {ital 1996 American Institute of Physics.}

• OSTI ID: 451095
• Report Number(s): CONF-9409431--
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 378; ISSN 0094-243X; ISSN APCPCS
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
AMORPHOUS STATE
BORON CARBIDES
CURRENT DENSITY
EFFICIENCY
ELECTRIC CONDUCTIVITY
SILICON
SILICON SOLAR CELLS
THIN FILMS
VAPOR DEPOSITED COATINGS