Hydrogen distribution in high stability a-Si:H prepared by the hot wire technique
Book
·
OSTI ID:527675
- Univ. of North Carolina, Chapel Hill, NC (United States). Dept. of Physics and Astronomy
- National Renewable Energy Lab., Golden, CO (United States)
One of the biggest problems for the widespread use of a-Si:H based solar cells is the so-called Staebler-Wronski effect (SWE). In this work the microstructures of 2--3 hydrogen at.% hot-wire CVD a-Si:H films were characterized by {sup 1}H nuclear magnetic resonance (NMR). Significant differences were found between the hydrogen distribution in these samples and that in conventional plasma-enhanced CVD samples. Among other things, the broad resonance line in the hot-wire a-Si:H is 50 kHz wide, which is much broader than that observed 25--35 kHz in PECVD a-Si:H films. Moreover, a 0.5 kHz resonance absorption hole width due to intrinsic dipolar interactions is obtained using the hole-burning technique. Surprisingly, approximately 90% of the hydrogen atoms give rise to the 50 kHz line and only a very small percentage of the hydrogen atoms give rise to the much narrower resonance line.
- OSTI ID:
- 527675
- Report Number(s):
- CONF-960401--; ISBN 1-55899-323-1
- Country of Publication:
- United States
- Language:
- English
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