Reduced Light-Induced Degradation in a Si:H: The Role of Network Nanostructure
In this work, we report our recent observations on strong reduction in Staebler-Wronski (SWE) effect in device quality a-Si:H that has been post-deposition annealed up to 400C, and make a connection between these observations and changes in a-Si:H network nanostructure and H bonding, both from our own FTIR and NMR measurements and from the SAXS and NMR literature. The results suggest that it is the smallest (atomic size) voids in a-Si:H that are most likely responsible for the Staebler-Wronski effect. Thermal treatments up to 400C lead to coalescence and restructuring of these voids leading to reduction of SWE.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1045072
- Report Number(s):
- NREL/CP-5200-50813
- Country of Publication:
- United States
- Language:
- English
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