Superconducting tunneling on VN/sub x/ films

Journal Article · Thu Aug 01 04:00:00 EDT 1985 · J. Low Temp. Phys.; (United States)

DOI:https://doi.org/10.1007/BF00681641· OSTI ID:5273553

Chen, L; Zhao, B R; Green, S M; Luo, H L

Superconducting tunneling junctions were fabricated on reactively sputtered VN/sub x/ films with Al/sub 2/O/sub 3/, SiO/sub 2/, or native oxide barriers. Results of the d/sup 2/I/dV/sup 2/ versus V measurements reveal a phonon structure that agrees well with that obtained in neutron scattering experiments.

• Research Organization: Department of Electrical Engineering and Computer Sciences, University of California at San Diego, La Jolla, California
• OSTI ID: 5273553
• Journal Information: J. Low Temp. Phys.; (United States), Journal Name: J. Low Temp. Phys.; (United States) Vol. 60:3; ISSN JLTPA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CHALCOGENIDES
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
FILMS
JUNCTIONS
NITRIDES
NITROGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHONONS
PHYSICAL PROPERTIES
PNICTIDES
QUASI PARTICLES
SILICON COMPOUNDS
SILICON OXIDES
SPUTTERING
SUPERCONDUCTING FILMS
SUPERCONDUCTING JUNCTIONS
TRANSITION ELEMENT COMPOUNDS
TUNNEL EFFECT
VANADIUM COMPOUNDS
VANADIUM NITRIDES