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Properties of superconducting vanadium nitride sputtered films

Journal Article · · Phys. Rev. B: Condens. Matter; (United States)
High-quality films of VN were prepared by reactive dc sputtering with the use of a triode source. The films were characterized by x-ray diffraction, temperature-dependent electrical resistivity, and superconducting T/sub c/. Deposition onto single-crystal sapphire substrates heated to 600 /sup 0/C resulted in uniaxial growth of grains along the (111) direction. Residual resistance ratios as high as 5 were obtained and T/sub c/ up to 8.9 K. The dependence of T/sub c/ on a lattice parameter differs considerably from previous reports in the literature. The temperature-dependent resistivity was found to be consistent with the parallel-resistor model. Tunnel junctions were fabricated by direct plasma oxidation of the film surface and preliminary quasiparticle results confirm that VN exhibits strong electron-phonon coupling. Josephson junctions utilizing an artificial CdS barrier display diffraction characteristics leading to an upper-bound estimate of the penetration depth of lambdaapprox.1300 A. .AE
Research Organization:
Illinois Institute of Technology, Chicago, Illinois 60616
OSTI ID:
5386985
Journal Information:
Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 32:5; ISSN PRBMD
Country of Publication:
United States
Language:
English

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