Structure control of Pb(Zr,Ti)O{sub 3} films using PbTiO{sub 3} buffer layers produced by magnetron sputtering

Journal Article · Fri Feb 28 23:00:00 EST 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.118679· OSTI ID:526487

Cattan, E; Velu, G; Jaber, B; Remiens, D; Thierry, B ^[1]

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1. Laboratoire des Materiaux Avances Ceramiques, CRITT, Universite de Valenciennes et du Hainaut-Cambresis, ZI Champ de l`Abbesse, F59600 Maubeuge (France)

The orientation of Pb(Zr,Ti)O{sub 3} (PZT) thin films grown by sputtering on a Si/SiO{sub 2}/Ti/Pt substrate using a PbTiO{sub 3} (PT) buffer layer was controlled by changing the thickness of the buffer layer. The x-ray diffraction of PT as a function of the thickness, in the range of 20{endash}400 {Angstrom}, showed modification of the PT orientation. That suggests a gradual evolution of the lattice parameters in the nucleation stage of PT films. The main growth mechanism was certainly due to the passing from an island growth to a continuous layer. The (111) oriented and (100) oriented PZT films were grown on 50 and 200 {Angstrom} PT buffer layers, respectively. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 526487
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 70; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
CRYSTAL STRUCTURE
FERROELECTRIC MATERIALS
LATTICE PARAMETERS
NUCLEATION
PZT
SPUTTERING
THICKNESS
THIN FILMS
X-RAY DIFFRACTION