Preparation and properties of highly (100)-oriented Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3} thin film prepared by rf magnetron sputtering with a PbO{sub x} buffer layer

Journal Article · Tue May 01 04:00:00 EDT 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2723190· OSTI ID:20982846

Wu, Jiagang; Zhu, Jiliang; Xiao, Dingquan; Zhu, Jianguo; Tan, Junzhe; Zhang, Qinglei ^[1]

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1. Department of Materials Science, Sichuan University, Chengdu 610064 (China)

A method for fabrication of highly (100)-oriented Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3} (PZT) thin films by rf magnetron sputtering with a special buffer of PbO{sub x} (RFMS-SBP) was developed. With this method, highly (100)-oriented Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3} thin films were prepared on the PbO{sub x}/Pt(111)/Ti/SiO{sub 2}/Si(100) substrates, and the preferential (100) orientation of the Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3} film is 92%. The (100) orientation of the PbO{sub x} buffer layer leads to the (100) orientation of the PZT thin films, and the thickness of the buffer layer plays a significant role on the phase purity and electrical properties of the films. Highly (100)-oriented Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3} thin films with proper thickness of PbO{sub x} buffer layer possess good electrical properties with larger remnant polarization P{sub r} (69.7 {mu}C/cm{sup 2}), lower coercive field E{sub c} (92.4 kV/cm), and good pyroelectric coefficient at room temperature (2.6x10{sup -8} C/cm{sup 2} K). The butterfly-shaped {epsilon}-E characteristic curve gives the evidence of the improved in-plane ferroelectric property in the films.

• OSTI ID: 20982846
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 101; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BUFFERS
DEPOSITION
ELECTRIC CHARGES
ELECTRICAL PROPERTIES
FERROELECTRIC MATERIALS
GRAIN ORIENTATION
LAYERS
LEAD OXIDES
PIEZOELECTRICITY
PLATINUM
POLARIZATION
PZT
SILICON
SILICON OXIDES
SPUTTERING
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
TITANIUM