Characterization of highly (110)- and (111)-oriented Pb(Zr,Ti)O{sub 3} films on BaPbO{sub 3} electrode using Ru conducting barrier
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China)
Highly non-(001)-oriented Pb(Zr,Ti)O{sub 3} (PZT) films have been fabricated by rf-magnetron sputtering. The preferential (110)-oriented BaPbO{sub 3} (BPO) deposited on Ru buffer layer induces the growth of (110)-oriented PZT film. With the aid of self-organized growth of PZT, the orientation of the film deposited on random-oriented BPO/Pt(111)/Ru(002) is (111)-preferred. The insertion of Pt layer between BPO and Ru changes the orientation of PZT from (110) to (111) and prevents the oxygen diffusion. These non-(001)-oriented PZT films possess more superior ferroelectric, fatigue, and retention properties than those of (001)-oriented PZT films.
- OSTI ID:
- 20702574
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 2 Vol. 87; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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