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Title: Ballistic electron emission microscopy studies of Au-CdTe and Au-GaAs interfaces and band structure

Abstract

Ballistic electron emission microscopy (BEEM) is an exciting new technique for probing electrical barriers at semiconductor interfaces. It offers huge potential because of its high lateral resolution, which is of the order of 1 nm. The authors have successfully applied the method of Schottky barriers at Au/n-CdTe and Au/n-GaAs interfaces. Simultaneous imaging of the surfaces of the thin gold overlayers an the metal semiconductor interfaces shows no correlation between the surface topography and the interface barrier heights. Measured variations in barrier heights are associated with local defects or contamination at the interfaces. On a nanometer scale, the interface barrier heights for the Au-CdTe show large variations (0.7-1.1 eV). The authors have observed small-scale regions where barrier heights are low. These are probably associated with tellurium precipitates at the interface. By contrast, barrier heights of the Au-GaAs system were exceptionally uniform. These samples were prepared by depositing gold onto atomically clean epitaxially grown GaAs(100) surfaces. Detailed investigations of the voltage dependence of the BEEM current allows the determination of minima in the conduction band of GaAs at the {Gamma}, L, and X points.

Authors:
; ; ; ; ;  [1]
  1. Univ. of Wales, Cardiff (United Kingdom)
OSTI Identifier:
5263146
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
Additional Journal Information:
Journal Volume: 9:2; Journal ID: ISSN 0734-211X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CADMIUM TELLURIDES; ELECTRONIC STRUCTURE; GALLIUM ARSENIDES; GOLD; INTERFACES; DEPOSITION; ELECTRON EMISSION; ELECTRON MICROSCOPY; HETEROJUNCTIONS; SAMPLE PREPARATION; SEMICONDUCTOR MATERIALS; TOPOGRAPHY; ULTRAHIGH VACUUM; ARSENIC COMPOUNDS; ARSENIDES; CADMIUM COMPOUNDS; CHALCOGENIDES; ELEMENTS; EMISSION; GALLIUM COMPOUNDS; JUNCTIONS; MATERIALS; METALS; MICROSCOPY; PNICTIDES; SEMICONDUCTOR JUNCTIONS; TELLURIDES; TELLURIUM COMPOUNDS; TRANSITION ELEMENTS; 360606* - Other Materials- Physical Properties- (1992-)

Citation Formats

Fowell, A E, Williams, R H, Richardson, B E, Cafolla, A A, Westwood, D I, and Woolf, D A. Ballistic electron emission microscopy studies of Au-CdTe and Au-GaAs interfaces and band structure. United States: N. p., Web. doi:10.1116/1.585463.
Fowell, A E, Williams, R H, Richardson, B E, Cafolla, A A, Westwood, D I, & Woolf, D A. Ballistic electron emission microscopy studies of Au-CdTe and Au-GaAs interfaces and band structure. United States. doi:10.1116/1.585463.
Fowell, A E, Williams, R H, Richardson, B E, Cafolla, A A, Westwood, D I, and Woolf, D A. . "Ballistic electron emission microscopy studies of Au-CdTe and Au-GaAs interfaces and band structure". United States. doi:10.1116/1.585463.
@article{osti_5263146,
title = {Ballistic electron emission microscopy studies of Au-CdTe and Au-GaAs interfaces and band structure},
author = {Fowell, A E and Williams, R H and Richardson, B E and Cafolla, A A and Westwood, D I and Woolf, D A},
abstractNote = {Ballistic electron emission microscopy (BEEM) is an exciting new technique for probing electrical barriers at semiconductor interfaces. It offers huge potential because of its high lateral resolution, which is of the order of 1 nm. The authors have successfully applied the method of Schottky barriers at Au/n-CdTe and Au/n-GaAs interfaces. Simultaneous imaging of the surfaces of the thin gold overlayers an the metal semiconductor interfaces shows no correlation between the surface topography and the interface barrier heights. Measured variations in barrier heights are associated with local defects or contamination at the interfaces. On a nanometer scale, the interface barrier heights for the Au-CdTe show large variations (0.7-1.1 eV). The authors have observed small-scale regions where barrier heights are low. These are probably associated with tellurium precipitates at the interface. By contrast, barrier heights of the Au-GaAs system were exceptionally uniform. These samples were prepared by depositing gold onto atomically clean epitaxially grown GaAs(100) surfaces. Detailed investigations of the voltage dependence of the BEEM current allows the determination of minima in the conduction band of GaAs at the {Gamma}, L, and X points.},
doi = {10.1116/1.585463},
journal = {Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)},
issn = {0734-211X},
number = ,
volume = 9:2,
place = {United States},
year = {},
month = {}
}