Ballistic-electron emission microscopy at metal/GaP(110) interfaces: Electron transport and Schottky-barrier heights

Journal Article · Thu Jul 01 04:00:00 EDT 1993 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.586974· OSTI ID:161738

Bauer, A; Cuberes, M T; Prietsch, M ^[1]

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1. Freie Universitaet Berlin (Germany); and others

Ballistic-electron emission microscopy (BEEM) was performed for Au and Mg films on n-type GaP(110). BEEM spectra taken with tip voltages up to 6 eV reveal a strong dependence of the spectral shape on metal-film thickness and on the type of the metal. Monte Carlo simulations of the electron transport allow a quantitative description of the BEEM current, and provide information on the tunneling process, on hot-electron transport in the metal film, on transmission across the interface, and on impact ionization within the semiconductor. In addition, the simulations quantitatively account for the observed dependence of the BEEM current on topographic features. The Schottky-barrier heights were also found to increase with the thickness of the metal film, demonstrating that Schottky-barrier formation is not yet completed when the overlayer metallizes. 22 refs., 5 figs., 1 tab.

• OSTI ID: 161738
• Report Number(s): CONF-930115--
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 4 Vol. 11; ISSN 0734-211X; ISSN JVTBD9
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
40 CHEMISTRY
66 PHYSICS
ELECTRON EMISSION
ELECTRON MICROSCOPY
GALLIUM PHOSPHIDES
GOLD
INTERFACES
IONIZATION
MAGNESIUM
MONTE CARLO METHOD
SEMICONDUCTOR MATERIALS
SHAPE
SPECTRA