Diffusive and inelastic scattering in ballistic-electron-emission spectroscopy and ballistic-electron-emission microscopy

Journal Article · Thu Jul 01 04:00:00 EDT 1993 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.586973· OSTI ID:161737

Lee, E Y; Turner, B R; Schowalter, L J ^[1]

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1. Rensselaer Polytechnic Institute, Troy, NY (United States); and others

Ballistic-electron-emission microscopy (BEEM) of Au/Si(001) n type was done to study whether elastic scattering in the Au overlayer is dominant. It was found that there is no dependence of the BEEM current on the relative gradient of the Au surface with respect to the Si interface, and this demonstrates that significant elastic scattering must occur in the Au overlayer. Ballistic-electron-emission spectroscopy (BEES) was also done, and, rather than using the conventional direct-current BEES, alternating-current (ac) BEES was done on Au/Si and also on Au/PtSi/Si(001) n type. The technique of ac BEES was found to give linear threshold for the Schottky barrier, and it also clearly showed the onset of electron-hole pair creation and other inelastic scattering events. The study of device quality PtSi in Au/PtSi/Si(001) yielded an attenuation length of 4 nm for electrons of energy 1 eV above the PtSi Fermi energy. 20 refs., 5 figs.

• OSTI ID: 161737
• Report Number(s): CONF-930115--; CNN: Contract N0014-92-J-1277; Contract F19628-91-K-0030
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 4 Vol. 11; ISSN 0734-211X; ISSN JVTBD9
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
40 CHEMISTRY
66 PHYSICS
ALTERNATING CURRENT
ATTENUATION
DIRECT CURRENT
ELASTIC SCATTERING
ELECTRON EMISSION
ELECTRON MICROSCOPY
ELECTRONIC STRUCTURE
FERMI LEVEL
GOLD
HOLES
N-TYPE CONDUCTORS
PLATINUM SILICIDES
SILICON
SPECTROSCOPY