Schottky barrier height measurements of Cu/Si(001), Ag/Si(001), and Au/Si(001) interfaces utilizing ballistic electron emission microscopy and ballistic hole emission microscopy

Journal Article · Fri Nov 15 04:00:00 EST 2013 · AIP Advances

DOI:https://doi.org/10.1063/1.4831756· OSTI ID:22251477

Balsano, Robert; Matsubayashi, Akitomo

The Schottky barrier heights of both n and p doped Cu/Si(001), Ag/Si(001), and Au/Si(001) diodes were measured using ballistic electron emission microscopy and ballistic hole emission microscopy (BHEM), respectively. Measurements using both forward and reverse ballistic electron emission microscopy (BEEM) and (BHEM) injection conditions were performed. The Schottky barrier heights were found by fitting to a linearization of the power law form of the Bell-Kaiser BEEM model. The sum of the n-type and p-type barrier heights are in good agreement with the band gap of silicon and independent of the metal utilized. The Schottky barrier heights are found to be below the region of best fit for the power law form of the BK model, demonstrating its region of validity.

• OSTI ID: 22251477
• Journal Information: AIP Advances, Journal Name: AIP Advances Journal Issue: 11 Vol. 3; ISSN AAIDBI; ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DIFFUSION BARRIERS
DOPED MATERIALS
ELECTRON EMISSION
MICROSCOPY
SILICON